Plating System — Ultra ECP map

For front-end dual-damascene applications

For dual-dual damascene applications, copper metal plating is product dependent and has a major impact on yield and reliability. Major process features include filling, metal thickness and thickness uniformity; with film properties, defects, impurities also key process indicators of ECP process performance.

Building on our proven Electro-Chemical-Plating (ECP) technology, the Ultra ECP map is configured with ACM’s exclusive Multi-Anode Partial Plating function, which allows the deposition of the copper metal layer on a dual-damascene structure, which is compatible for 55nm/40nm/28nm/14nm applications and beyond.

ACM has numerous patents, awarded and pending, in many areas of plating technology—such as multizone anodes for superior uniformity control, rubber-seal plating chucks for superior sealing, partial pulse plating for pattern structure filling, etc.

Main Benefits

  • Partial pulse plating technology
  • Independent module design
  • Compatible with ultra-thin seed layer
  • High throughput and uptime
  • Lower cost of consumables and cost of ownership
  • Extends to Cu plating application

Features & Specifications

  • System for 300mm wafers
  • Up to 3 Load Ports
  • Up to 4 plating chambers with partial pulse plating system
  • Up to 4 cleaning chambers
  • Up to 8 anneal chambers
  • Plating uniformity: WIWNU < 1.5%, WTWNU < 1.5%

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