ACM Technical Papers
Advancing semiconductor wet processing technologies
Removal of Fine Particles using SAPS Technology and Functional Water
SAPS megasonic technology coupled with functional water has a significant capability for fine particle removal in wafer cleaning, and the mechanism for this functioning is explained by radical generation.
TSV Cleaning using SAPS Megasonic Cleaning Technology
SAPS megasonic technology incorporated with dilute solution has a high cleaning efficiency for fluoropolymer sidewall residue removal in post silicon etch TSV cleaning, with minimal damage to the structures and low material loss.
Highly Uniform Cu Film Deposition by Electrochemical Methods
A deposited Cu film that has within-film nonuniformity (WFNU) exceeding 2.5% fails to meet the requirement for subsequent CMP process. WFNU less than 1.0% was achieved for 3000Å Cu film deposited on 350Å Cu seed through optimization of chamber design and the deposition process.
Optimization of Film Uniformity by Electrochemical Copper Deposition Chamber Design
The impact of chamber design parameters on the non-uniformity of Cu film deposited by electrochemical method were investigated quantitatively by simulating the film growth process. Further studies were conducted to optimize basic process parameters.